Table I-16 to Subpart I of Part 98 - —Default Emission Destruction or Removal Efficiency (DRE) Factors for Electronics Manufacturing

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Table I-16 to Subpart I of Part 98—Default Emission Destruction or Removal Efficiency (DRE) Factors for Electronics Manufacturing

Manufacturing type/process type/gas	Default DRE (percent)
MEMS, LCDs, and PV Manufacturing	60
Semiconductor Manufacturing:
Plasma Etch/Wafer Clean Process Type:
CF₄	75
CH₃F	97
CHF₃	97
CH₂F₂	97
C₂F₆	97
C₃F₈	97
C₄F₆	97
C₄F₈	97
C₅F₈	97
SF₆	97
NF₃	96
All other carbon-based plasma etch/wafer clean fluorinated GHG	60
Chamber Clean Process Type:
NF₃	88
All other chamber clean fluorinated GHG	60
N₂O Processes:
CVD and all other N₂O-using processes	60

[78 FR 68234, Nov. 13, 2013]

                    
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Table I-16 to Subpart I of Part 98 - —Default Emission Destruction or Removal Efficiency (DRE) Factors for Electronics Manufacturing

Table I-16 to Subpart I of Part 98—Default Emission Destruction or Removal Efficiency (DRE) Factors for Electronics Manufacturing

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