Table I-3 to Subpart I of Part 98 - —Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for 150 mm and 200 mm Wafer Sizes  


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  • Table I-3 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for 150 mm and 200 mm Wafer Sizes

    Table I-3 to Subpart I of Part 98—Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for 150 mm and 200 mm Wafer Sizes

    Process type/sub-type Process gas i
    CF4 C2F6 CHF3 CH2F2 C2HF5 CH3F C3F8 C4F8 NF3 SF6 C4F6 C5F8 C4F8O
    Etching/Wafer Cleaning
    1-Ui 0.810.720.510.130.0640.70NA0.140.190.550.170.072NA
    BCF4 NA0.100.0850.0790.077NANA0.110.00400.130.13NANA
    BC2F6 0.046NA0.0300.0250.0240.0034NA0.0370.0250.110.110.014NA
    BC4F6 NANANANANANANANANANANANANA
    BC4F8 NANANANANANANANANANANANANA
    BC3F8 NANANANANANANANANANANANANA
    BC5F8 0.0012NA0.0012NANANANA0.0086NANANANANA
    BCHF3 0.100.047NA0.049NANANA0.040NA0.00120.0660.0039NA
    Chamber Cleaning
    In situ plasma cleaning:
    1-Ui 0.920.55NANANANA0.400.100.18NANANA0.14
    BCF4 NA0.21NANANANA0.200.110.050NANANA0.13
    BC2F6 NANANANANANANANANANANANA0.045
    BC3F8 NANANANANANANANANANANANANA
    Remote plasma cleaning:
    1-Ui NANANANANANANANA0.017NANANANA
    BCF4 NANANANANANANANA0.015NANANANA
    BC2F6 NANANANANANANANANANANANANA
    BC3F8 NANANANANANANANANANANANANA
    In situ thermal cleaning:
    1-Ui NANANANANANANANANANANANANA
    BCF4 NANANANANANANANANANANANANA
    BC2F6 NANANANANANANANANANANANANA
    BC3F8 NANANANANANANANANANANANANA

    [81 FR 9255, Dec. 9, 2016]